ISM10NT3-45 Features
100V/45A, RDS(ON) = 11mΩ @ VGS = 12V
Super high density cell design for extremely low RDS(ON)
Exceptional On-Resistance and maximum DC current capability
Faster Switching Speeds
Designed for TID, DD & SEU
Full Military temperature range -55°C to + 125°C
Description
The ISM10NT3-45 is an N-Channel logic enhancement mode power field effect transistor which are produced using super high cell density DMOS technology. The ISM10NT3-45 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
The ISM10NT3-45 is available in a low Ohmic TO-254AA tables metal package, with solder dip option available.
Absolute maximum ratings, recommended operating conditions, electrical specifications and performance characteristics are identical for all units. Any exceptions, due to packaging variations and limitations, are as noted in the datasheet.