ISM10NS0-14 Features
100V/14A, RDS(ON) = 200mΩ @ VGS = 12V
Super high density cell design for extremely low RDS(ON)
Exceptional On-Resistance and maximum DC current capability
Faster Switching Speeds
Designed for TID, DD & SEU
Full Military temperature range -55°C to +125°C
Description
The ISM10NS1-14 is an N-Channel logic enhancement mode power field effect transistors which are produced using super high cell density DMOS technology. The ISM10NS1-14 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.