ISM06NT4-18 Features
60V/18A, RDS(ON) = 40mΩ @ VGS = 12V
Super high density cell design for extremely low RDS(ON)
Exceptional On-Resistance and maximum DC current capability
Faster Switching Speeds
Designed for TID, DD & SEU
Full Military temperature range -55°C to + 125°C
Description
The ISM06NT4-18 is an N-Channel logic enhancement mode power field effect transistor which are produced using super high cell density DMOS technology. The ISM06NT4-18 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
The ISM06NT4-18 is available in a TO-257AA metal package, with solder dip option available.
Absolute maximum ratings, recommended operating conditions, electrical specifications and performance characteristics are identical for all units. Any exceptions, due to packaging variations and limitations, are as noted in the datasheet.