These devices are single Hermetically sealed optocouplers. Each channel is composed of a Gallium Arsenide infra-red emitting diode and a silicon phototransistor. Package styles for these devices are hybrid 4 pin. The same electrical die, assembly processes and materials are used for each channel of each device shown below. Therefore absolute maximum ratings, recommended operating conditions, electrical specifications and performance characteristics are shown below.
Datasheet
Absolute Maximum Ratings (Ta=25°C)
Storage Temperature
-65°C to +150°C
Operating Temperature
-55°C to +125°C
Lead Soldering Temperature
260°C 1.6mm from case for 10S
Input-to-Output Isolation Voltage
500VDC
Input Diode
Forward DC Current
15mA
Reverse DC Voltage
5V
Peak forward Current
1.5mA
< 10μS duration
Power Dissipation
25mW
Derate linearly above 100°C at 1.6W/°C
Output Transistor
Collector-Emitter Voltage
30V
BVCEO
Emitter-Collector Voltage
7V
BVECO
Collector Current
20mA
Collector Current
100mA
t = 1mS
Power Dissipation
100mW
Derate linearly above 100°C at 1.4W/°C
Electro-optical Characteristics
TA = 25°C U.O.S. (each channel where appropriate).
Input Diode Electrical Characteristics
Parameter
Symbol
Test Conditions
Min
Type
Max
Units
Forward Voltage
VF
IF = 10mA
0.7
1.18
1.8
V
(see note 4)
IF = 10mA, TA = 125°C
0.7
1.10
1.8
IF = 10mA, TA = -55°C
0.7
1.29
1.8
Reverse Breakdown Voltage
VR
IR = 0.1mA
5
V
Reverse Current
IR
VR = 3V
100
µA
Capacitance
CIN
V = 0, f = 1MHz
25
pF
Output Detector Electrical Characteristics
Parameter
Symbol
Test Conditions
Min
Type
Max
Units
Collector-Emitter Breakdown Voltage
(See note 1 below)
BVCEO
IC = 1mA
30
V
Collector-Base Breakdown Voltage
(See note 1 below)
BVCBO
IB = 0.1mA
70
V
Emitter-Collector Breakdown Voltage
BVECO
IE = 0.1mA
7
V
Emitter-Base Breakdown Voltage
BVEBO
IB = 0.1mA
5
V
Collector-Emitter Leakage Current
ICEO
VCE = 20V, IF = 0
6
100
µA
VCE = 20V, IF = 0, TA = 125°C
8
100
Coupled Electrical Characteristics
Parameter
Symbol
Test Conditions
Min
Type
Max
Units
DC Current Transfer Ratio
(See note 3)
IC/IF
IF = 10mA, VCE = 5V;
TA = -55°C-125°C
35
%
Collector-Emitter Saturation Voltage
VCE(Sat)
IF = 2mA, IC = 0.2mA
0.25
V
Input to Output Capacitance
CIO
VIO = 0, f = 1mhz (See note 2 below)
3
5
pF
Input to Output Resistance
RIO
VIO = 500V
(See note 2 below)
1011
Ω
Isolation Voltage
VIO
(See note 2 below)
500
VDC
Delay Time
td
VCC = 5V, IC = 2mA
4.0
µS
Rise Time
tr
RL = 100Ohms
5.0
µS
Storage Time
ts
0.7
µS
Fall Time
tf
5.0
µS
Turn-on Time
ton
VCC = 5V, If = 5mA
9
µS
Turn-off Time
toff
RL = 1KOhms
25
µS
Notes:
1. BVCEO and BVCBO can be selected to suit customer specifications.
2. Measured between input when leads 1, 2 and 3 are shorted together and output when leads 4, 5 and 6 are shorted together.
3. A higher CTR can be selected to suit customer specification as a standard part.
4. For Radiation Tollerant VF max = 2.0V
Exhibitions
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